The properties of edge specific graphene nanoribbons

We have addressed the comparison of the structural and electronic properties of sidewall graphene grown with different edge terminations, showing that armchair and zigzag terminated ribbons, grown from SiC, have very different topographies and interact differently with the substrate. In particular, AC edge graphene is decoupled from a functionalized sidewall ribbon bonded to the substrate facet wall.
M. S. Nevius et al., Nano Lett. 14 (11), 6080–6086 (2014).

In this work, we begin the groundwork needed to address the origin of sidewall ribbons high mobilities by providing detailed structural and electronic information on the differences between armchair (AC) and zigzag (ZZ) edge sidewall graphene ribbons.
Using a combination of low energy electron microscopy (LEEM), microspot-low energy electron diffraction (μ-LEED), X-ray photoemission microscopy (XPEEM), and microprobe angle resolved photoemission spectroscopy (μ-ARPES), we have compared the growth and electronic structure of AC and ZZ graphene ribbon arrays. We demonstrate that ZZ ribbons with linear π-bands do not grow on the sidewalls like AC ribbons but instead grow along a narrow strip on the (0001) (Si-face)

surface near the step edges that are perpendicular to the ⟨1120⟩ direction. On the other hand, AC edge graphene grows up and over the SiC (110n) sidewall facets and is decoupled from a functionalized sidewall ribbon below that is bonded to the SiC facet wall.

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The Bottom-up Growth of Edge Specific Graphene Nanoribbons;
M. S. Nevius, F. Wang, C. Mathieu, N. Barrett, A. Sala, T. O. Menteş, A. Locatelli, and E. H. Conrad;
Nano Lett. 14 (11), 6080–6086 (2014).
doi: 10.1021/nl502942z;
Last Updated on Tuesday, 13 November 2018 18:08