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Franz-Keldysh Effect in Bulk GaAs reveals a mixed regime of light-matter interaction

The study of the FKE in bulk GaAs showed that the phase content of the selected electromagnetic pulses can be used to measure the timescales characteristic for the different regimes of matter-light interactions. This allowed us to identify a novel regime of saturation where memory effects are of relevance.

Scientific Reports 3: 1227 doi:10.1038/srep01227





Figure Caption:
(a) THz field detected by electro-optical sampling.

(b) Time-resolved variation of the transmission in GaAs as a function of pump-probe delay and probed energy.

(c) Wavelength-dependent Franz-Keldysh effect. Vertical section at t = 0 (red curve) and simulation based on the static FK effect with an applied field of 100 kV/cm (black curve).





Significant changes of the optical properties of semiconductors can be observed by applying strong electric fields capable to modify the band structure at equilibrium. This is known as the Franz-Keldysh effect (FKE). Here we study the FKE in bulk GaAs by combining single cycle THz pumps and broadband optical probes. The experiments show that the phase content of the selected electromagnetic pulses can be used to measure the timescales characteristic for the different regimes of matter-light interactions. Furthermore, the present phase-resolved measurements allow to identify a novel regime of saturation where memory effects are of relevance
Last Updated on Thursday, 16 May 2013 16:13