Magnetic proximity effect: insights from Ni/Si heterostructures
Our study marks a significant advancement in the understanding of metal-semiconductor interfaces, showcasing the magnetic proximity effect in Ni/Si interfaces with unprecedented clarity.
By systematically employing X-ray magnetic circular dichroism (XMCD) to study these interfaces, we've uncovered how the presence of an adjacent Ni layer induces equilibrium magnetization within the silicon substrate—a phenomenon that vividly illustrates the magnetic proximity effect in action.
The study examines two Ni/Si heterostructures with varying semiconductor doping levels, unveiling a magnetic proximity effect that results in equilibrium magnetization in the semiconductor substrate induced by the adjacent Ni layer. The findings demonstrate distinct magnetization signs corresponding to the doping levels: low-doped samples show parallel alignment to the Ni layer, while high-doped samples align antiparallel, showcasing a nuanced interplay of underlying magnetization mechanisms.
These discoveries not only advance our understanding of ferromagnetic-semiconductor interface behavior but also pave the way for the design of advanced spintronic devices that capitalize on the nuanced magnetic properties of these hybrid systems. The research marks a significant step towards integrating magnetic properties into silicon-based materials, a key objective in the field of spintronics, heralding the development of more energy-efficient and faster electronic devices.
Discover the full article here: DOI: 10.1038/s41598-023-50795-w
