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			Specifications		
	
	
| 
	Beamline: insertion device
	
		
			| source: | one 3-section undulator 12.506 cm period |  
			| polarisation: | horizontal |  
			| energy range: | 16-1000 eV |  
			| number of periods | 36 |  
			| Deflection parameter K | < 5.3 |  
			| Source size (sigma) | 243 x 56 mm2 (H x V) at 100 eV |  
			| Source divergence (sigma) | 74 x 70 mrad2 (H x V) at 100 eV |  
	
 | 
	Beamline: monocromator
	
		
			| type: | spherical grating monochromator |  
			| number of gratings: | 5 |  
			| pre-focussing mirrors: | 2 spherical |  
			| refocussing mirror | toroidal |  
			| energy Range | 20-750 eV |  
			| resolving power: | 20 000 @ 65 eV, 15 000 @ 400 eV
 |  
	
 | 
 Read more...
	
| 
	Preparation chamber
	
		
			| base pressure | low 10-10 mbar |  
			| manipulator's degrees of freedom | 5 |  
			| temperatures | 100-160 to 400K (to 2500K in a separated heating station) |  
	
		“in situ” UHV samples preparation
		Low energy electron diffraction
		Ion sputtering
		Annealing
		Gas lines
		Metal beam epitaxy
		Microbalance 
	Heating station
	
		High temperature (2500K) annealing
		CVD (chemical vapor deposition) up to 10-3 mbar
		Magnetizing coil 
	Read more... 
	
 | 
	Main chamber
	
		
			| base pressure | 10-11 mbar |  
			| manipulator's degrees of freedom | 5 (motorized azimuthal angle motion) |  
			| temperatures | 9 - 450K on vertical manipulator |  
	Scienta R4000 Analyzer
	
		30 degrees angle range (670 channels in parallel acquisition)
		Angle resolution from 0.1°
		Energy resolution from 1 to 10 meV 
	Read more... | 
 	
	
Last Updated on Friday, 02 October 2015 15:14