Seminars Archive

Mon 24 Jan, at 10:00 - Seminar Room T2

C60 Interaction with Metals and Semiconductors Surfaces

Cinzia Cepek
Laboratorio TASC

C60 epitaxial growth on different metal and semiconductor substrates has attracted much interest in the last few years. Such systems can be used both as templates for the deposition of single-crystalline C60 thick films and to study the interaction between C60 molecules and different elements. The character of the bond between fullerene molecules and different substrates varies widely depending on many different factors. Strong charge transfer from metal atoms to the C60 molecules has been observed in C60 adsorption on noble metals, while, for example, on Pt(111) and Al(110) the interaction has primarily covalent character with negligible charge transfer. Recently, the interaction of C60 with elemental semiconductor surfaces, in particular with Si, has been the subject of an intense experimental work because of the potential industrial applications of these systems. Here we will show our experimental results on C60 monolayer films epitaxially grown on systems where the molecules present different bonding states, mainly ionic or covalent in character. In particular we will focus onto: 1) the C60/Ag(100) ordered monolayer, where the molecules are ionically bound to the surface 2) the C60/Si(111) and Ge(111) surfaces, where the interaction between the molecules and the surface has mainly covalent character. The measurements have been performed by using photoemission spectroscopy, X-ray photoelectron diffraction, LEED, and STM.

Last Updated on Tuesday, 24 April 2012 15:21