Seminars Archive

Wed 15 Jan, at 11:00 - Training Room

Probing of the electronic structure at complex oxide interfaces – from resonant to standing-wave excitation.

Slavomír Nemšák
Lawrence Berkeley National Laboratory, Berkeley, CA, USA

Recently, interfaces between various complex oxides have been broadly studied by a variety of techniques due to their unique properties, such as strong electron correlations, superconductivity, or magnetism. For example, the presence of 2D electron gas (2DEG) formed at the interface between a Mott insulator GdTiO3 and a band insulator SrTiO3 was confirmed by transport measurements with extremely high sheet carrier densities of 3×10^14 cm-2 a while ago [1], but the direct observation in terms of angle-resolved photoemission spectroscopy (ARPES) was still missing. Using advanced techniques of resonant photoemission spectroscopy and standing-wave photoelectron spectroscopy we show the existence of such electronic state and further study its nature and properties. [1] P. Moetakef et al., Appl. Phys. Lett. 99 (2011) 232116

(Referer: E. Cantori)
Last Updated on Tuesday, 24 April 2012 15:21