XRD1 Highlights

PDI8CN2 for n-Type Thin-Film Transistors



Schematic drawing of the crystal structure of PDI8CN2. 2D-GIXD experimental and simulated images. Copyright 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Multiscale investigation of N,N’-bis(n-octyl)-x:y, dicyanoperylene-3,4:9,10-bis(dicarboximide), PDI8CN2, n-type semiconductor, consisting in the characterization of the crystallographic structure and morphology of molecular films.GIXRD (Grazing Incidence X Ray Diffraction) and AFM (AtomicForce Microscopy) measurements reveal that the crystalline order and the growth mechanism of PDI8CN2 films depend on the deposition temperature.

We show how these features are highly correlated with the electrical response of PDI8-CN2-based

field-effect transistors.


Retieve Article


Structure and Morphology of PDI8-CN2 for n-Type Thin-Film Transistors; Liscio F., Milita S., Albonetti C., D’Angelo P., Guagliardi A., Masciocchi N., Della Valle R.G., Venuti E., Brillante A. and Biscarini F., Adv. Funct. Mater. 22, 943 (2012); doi: 10.1002/adfm.201101640


Ultima modifica il Mercoledì, 08 Settembre 2021 14:57