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High-quality graphene

Graphene of extraordinary quality can be obtained on single crystal Ir(111) films, which are grown heteroepitaxially on Si(111) wafers with an yttria stabilized zirconia (YSZ) buffer layer. This method can represent a good way for an up-scalable and low cost synthesis of monolayer graphene.

  Struzzi et al., Carbon 81, 167 (2015).

The formation of graphene by chemical vapor deposition (CVD) on single crystal Ir(111) films, grown heteroepitaxially on Si(111) wafers with yttria stabilized zirconia (YSZ) buffer layers, has been investigated by ARPES and other spectroscopic and microscopic techniques. Our results highlight the excellent crystalline quality of graphene, comparable to graphene prepared on Ir(111) bulk single crystals. This synthesis route allows for inexpensive growth on standardized disposable substrates, suitable for both optical and electron spectroscopic characterization, which meets the needs of many researchers in the field. Furthermore, this fabrication technique can potentially be scaled towards larger output and, using Si wafers, can be more easily 

implemented into standard Si technology than processes based on other supports.

Retrieve article
High-quality graphene on single crystal Ir(111) films on Si(111) wafers: Synthesis and multi-spectroscopic characterization
C. Struzzi, N.I. Verbitskiy, A.V. Fedorov, A. Nefedov, O. Frank, M. Kalbac, G. Di Santo, M. Panighel, A. Goldoni, J. Gärtner, W. Weber, M. Weinl, M. Schreck, Ch. Wöll, H. Sachdev, A. Grüneis, L. Petaccia,
Carbon 81, 167 (2015).
doi: 10.1016/j.carbon.2014.09.045
Last Updated on Monday, 30 January 2017 11:44