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VUV Publications


  1. 1D electronic properties in temperature-induced c(4¿¿2) to 2¿¿1 transition on the ¿¿-SiC(100) surface
    Enriquez H., Derycke V., Aristov V.Y., Soukiassian P., Le Lay G., Di Cioccio L., Cricenti A., Croti C., Ferrari L., Perfetti P.
    Applied Surface Science, Vol. 162, pp. 559-564 (2000)
    doi: 10.1016/S0169-4332(00)00250-6 (Journal Article)
  2. Chemisorption of azafullerene on silicon: Isolating C59N monomers
    Butcher M.J., Jones F.H., Cotier B.N., Taylor M.D.R., Moriarty P., Beton P.H., Prassides K., Tagmatarchis N., Comicioli C., Ottaviani C., Crotti C.
    Materials Science and Engineering B: Solid-State Materials for Advanced Technology, Vol. 74 - 1, pp. 202-205 (2000)
    doi: 10.1016/S0921-5107(99)00562-0 (Journal Article)
  3. Core-level photoemission from graphite
    Prince K.C., Ulrych I., Peloi M., Ressel B., Cháb V., Crotti C., Comicioli C.
    Physical Review B - Condensed Matter and Materials Physics, Vol. 62 - 11, pp. 6866-6868 (2000)
    doi: 10.1103/PhysRevB.62.6866 (Journal Article)
  4. Ge/Si(001)c(4¿¿2) interface formation studied by high-resolution Ge 3d and Si 2p core-level spectroscopy
    Larciprete R., De Padova P., Quaresima C., Ottaviani C., Perfetti P., Peloi M.
    Physical Review B - Condensed Matter and Materials Physics, Vol. 61 - 23, pp. 16006-16014 (2000)
    doi: 10.1103/PhysRevB.61.16006 (Journal Article)
  5. Periodicity and thickness effects in the cross section of quantum well states
    Mugarza A., Ortega J.E., Mascaraque A., Michel E.G., Altmann K.N., Himpsel F.J.
    Physical Review B - Condensed Matter and Materials Physics, Vol. 62 - 19, pp. 12672-12675 (2000)
    doi: 10.1103/PhysRevB.62.12672 (Journal Article)
  6. Photon energy dependence of the Gd 4d photoemission
    Szade J., Neumann M., Karla I., Schneider B., Fangmeyer F., Matteucci M.
    Solid State Communications, Vol. 113 - 12, pp. 709-712 (2000)
    doi: 10.1016/S0038-1098(99)00563-3 (Journal Article)
  7. Sb-terminated Si(110), Si(100) and Si(111) surfaces studied with high resolution core-level spectroscopy
    Cricenti A., Ottaviani C., Comicioli C., Crotti C., Ferrari L., Quaresima C., Perfetti P., Le Lay G.
    Applied Surface Science, Vol. 162, pp. 380-383 (2000)
    doi: 10.1016/S0169-4332(00)00219-1 (Journal Article)
  8. Sharp high-resolution Si 2p core level on the Sb-terminated Si(111) surface: Evidence for charge transfer
    Cricenti A., Quaresima C., Ottaviani C., Ferrari L., Perfetti P., Crotti C., Le Lay G., Margaritondo G.
    Physical Review B - Condensed Matter and Materials Physics, Vol. 62 - 15, pp. 9931-9934 (2000)
    doi: 10.1103/PhysRevB.62.9931 (Journal Article)
  9. Temperature effect on the reconstruction of Sb/Si(001) interface studied by high resolution core level spectroscopy and RHEED analysis
    De Padova P., Larciprete R., Quaresima C., Reginelli A., Perfetti P.
    Applied Surface Science, Vol. 166 - 1, pp. 214-219 (2000)
    doi: 10.1016/S0169-4332(00)00417-7 (Journal Article)
Last Updated on Wednesday, 11 April 2012 12:14